Chicago Local Section
This section serves the needs of the ECS members interested in electrochemical science and technology in Chicago area and nearby vicinity. Geographically the members are from Northern Illinois, Northern Indiana, Iowa, and Missouri. The northern part borders with Wisconsin, home of the Southern Wisconsin Local Section. The Chicago and Southern Wisconsin Local Sections maintain ties in alternate hosting of the annual Student Symposium.
The Chicago Local Section typically holds one evening technical meeting
per month, usually in a local area restaurant, following a dinner and casual
social.
For the spring 1996 we have organized a full-day symposium on the Electrochemistry
of Surfaces and Interfaces.
The Chicago Section was the Host Committee for the October 1995 Meeting
in Chicago.
You may also review a recent report
of the 1996 activities of the Chicago Local Section.
You may overview a list of past and future
meetings.
Section Officers for 1996-1997
Yong S. Zhen, Chairman
The Institute of Gas Technology
1700 S. Mount Prospect
Des Plaines, IL 60018
Tel: 630-768-0643
FAX: 630-768-0546
E-mail: zhen@igt.org
Lijun Bai, Vice-Chairman
Motorola
4088 Commercial Ave. #19
Northbrook, IL 60062-1829
Tel: 630-714-7405
FAX: 630-714-7419
E-mail: c16172@email.mot.com
William R. Penrose, Secretary
Transducer Research, Inc.
600 North Commons Drive, Suite 117
Aurora, IL 60504
Tel: 630-978-8802
FAX: 630-978-8854
E-mail: wpenrose@interaccess.com
James M. Vetrone, Treasurer
Argonne National Lab.
MSD, Building 212
9700 S. Cass Ave.
Argonne, IL 60439
Tel: 630-252-4080
FAX: 630-252-4798
E-mail: jim_vetrone@qmgate.anl.gov
Peter J. Hesketh, Councilor
The University of Illinois at Chicago
Dept. Of Electrical Engineering and Materials Science
851 South Morgan St.
Chicago, IL 60607-7053
Tel: 312-413-7574
FAX: 312-413-0024
E-mail: peter@uicbert.eecs.uic.edu
Chicago Local Section Bylaws
"Click" here to review the Bylaws of the Chicago Local Section.
October 24th, 1996
"Temperature-Dependent Studies in Electrochemical Surface Science"
by Gregory Jerkiewicz,
University of Sherbrooke, Department of Chemistry.
Temperature variation can affect numerous electrochemical surface processes
such as the under-potential deposition of hydrogen and metals (UPD-H and
UPD-M, respectively), surface oxide formation and reduction, or anion adsorption.
In the case of surface oxide formation on noble metals, the temperature
increase augments the rate of surface oxidation, thus the oxide thickness.
In the case of UPD-H and UPD-M, temperature dependence studies followed
by theoretical treatment lead to determination of thermodynamic state functions
such as Gibbs energy change of adsorption, entropy change of adsorption
and change in adsorption enthalpy. Knowledge of the enthalpy change of
adsorption is essential in subsequent elucidation of the bond energy between
the metal substrate and the UPD species, thus in evaluation of the surface
cohesive forces that are responsible for the adhesion of the adsorbate
to the substrate. Dr. Jerkiewicz presented experimental data which lead
to determination of the bond energy between UPD evolved hydrogen and noble
metal substrates. Subsequently, he demonstrated how coadsorbed S adatoms
influence this bond energy through local electronic effects. Finally, he
showed data on H and sulfate adsorption on Pt(100) and Pt(111) electrodes.
There were 12 dinner guests and 3 more joined for the after-dinner talk.
December 5th, 1996
"Using EC-SPM To Induce and Monitor Processes at the Liquid-Solid
Interface" by Daphna Yaniv,
Molecular Imaging, 1200 East Broadway,
Tempe AZ 85282.
Combining electrochemistry with scanning probe microscopy (SPM) enables
inducing surface processes at the liquid-solid interface and simultaneously
imaging them. By using in-situ electrochemical SPM (both Scanning Tunnelling
and Atomic Force Microscopy), surface images with resolution ranging from
atomic/molecular to tens of square micrometers can be obtained. Numerous
examples were shown to demonstrate variety of EC-PSM experiments, such
as surface reconstruction, potential induced surface dissolution, order-disorder
transitions, molecular recognition, corrosion processes, tip-induced deposition,
and tip-induced etching. She also presented the consideration behind the
design of an SPM for electrochemical imaging, focusing on environmental
and temperature control imaging.
After the talk we were able to take a close look at the actual probe, its
attachments, Peltier cooling stage and insulated tips.
There were 14 dinner guests at tis meeting in spite of snow and sleet on
the roads earlier that day.
Location: Grand Mandarin Chinese Restaurant, 3099 Ogden Avenue, Lisle (630)-357-0888.
Cost: $20 ($8 to students, postdoctorals and unemployed members).
January 16th, 1997
"Si-based tactile sensors, electrostatic tactile displays and novel
approaches to embryo labeling" by Dave Beebe, University of Illinois
at Urbana/Champaigh.
Peter Hesketh, technical chairman
Meeting held at the Univeersity of Illinois at Chicago
March 3rd, 1997
"Silicon Processing and Thin Film Integrated Electronics"
by Robert H. Reuss, Motorola Automotive, Energy and Components Sector
Abstract: The talk will focus on the evolution of silicon processing
with emphasis on application to display technology, particularly active
matrix LCDs. Trends in substrate sizes, devices/cm2 etc. will be reviewed
and discussed in the context of the growth of microelectronics (for memory
and logic) and þgiant electronicsþ (for displays and related
products). These trends will be compared and contrasted and projections
of where these related, but different technologies will be applied for
emerging markets such as integrated electronics will be suggested. Areas
of active research in this dynamic field as well as requirements for realization
of thin film integrated electronics will be highlighted.
Dr. Reuss received his Ph.D. in Chemistry from Drexel University in 1971.
He has been a member of the Research Faculty of the University of Colorado,
worked for the government as a research and development manager for seven
years, and joined the Motorola Semiconductor Product Sector in 1981. He
led development teams in the area of evaluation and application of new
device fabrication process technologies. In 1993, he became the Director
of Technical Support for the Automotive, Energy and Controls Group, emphasizing
battery and display technologies. He recently became the Director of Advanced
Technology for Motorola Energy Systems, where he is responsible for a team
which is evaluating capacitor technology for applications in advanced Motorola
products.
Place: Grand Mandarin Restaurant, 3099 Ogden Avenue, Lisle. Phone 630-357- 0888. Exit I-88 at Naperville Road and turn right (south) onto Naperville-Wheaton Road. At Ogden Avenue, turn left (east). The restaurant is 1/4 mile on the right, brightly decorated and hard to miss. Time Social at 6:00 PM, dinner at 7:00 PM, talk at 8:00 PM. Reply to: Reservations for dinner by March 4 to Bill Penrose 630-548-3548 (mailto:wpenrose@interaccess.com), No reservations needed for attending talk without dinner. Cost $20 ($8 to students, post-doc's, and unemployed members). Be sure to honor your reservations; the Chapter has to pay for all dinners ordered.
March 27th, 1997
Social (family) meeting:
Hongchao Zhang, a Chinese Martial Arts Master: Tai Ji Quan (or Tai Chi):
- A Martial Art That Prolongs Life
Abstract: Taiji Quan is one of the traditional Chinese sports and has been welcomed by the people of the world. It has a long history and great variety of forms and routines. Practicing Taiji Quan has an all-around effect on all the organs and systems of the human body. It has been proven that Taiji Quan is an important means for strengthening one's fitness, preventing disease, and prolonging life. This lecture will introduce Taiji Quan and demonstrate different styles of Taiji Quan and Taiji Sword. The audience will then have an opportunity to learn and practice basic Taiji movements, relaxation, and coordination of breathing.
Hongchao Zhang, a Chinese Martial Arts Master, received his B.A. in Martial Arts from Wuhan Institute of Physical Education in 1978. He taught Chinese Martial Arts at Wuhan Institute of P.E. from 1978 to 1989. In 1980, he was one of the founders of the Qigong Research Group there. In 1988, he received his Masters degree in Martial Arts from the Shanghai Institute of Physical Education. Master Zhang has won 8 black-belt Championships in American Competition. He is now the advisor to American Martial Arts Association and an instructor at Illinois University and Truman College. He has his own school at 3729 N. Ravenswood Ave., Chicago (Tel: 773-883-1016).
Place: Szechuan Palace, 1629 Chicago Avenue, Evanston, IL 60201. Exit from I-294 or I-94 at Dempster Avenue and travel east to Chicago Avenue in Evanston. There is a railway overpass just before you reach Chicago Avenue. Turn left. The Szechuan Palace is one block north at Church St. Free indoor parking is available on the northeast corner of Chicago and Church St.
Time Social at 6:00 PM, dinner at 7:00 PM, talk at 8:00 PM.
Reply to: Reservations for dinner by Tuesday, March 25, to Bill Penrose
630-548-3548 (wpenrose@interaccess.com). No reservations needed for attending
talk without dinner.
Cost $15 ($10 to students, post-doc's, and unemployed members). Be sure
to honor your reservations; the Chapter has to pay for all dinners ordered.
Other: Send your email address to wpenrose@interaccess.com
and get your meeting notices sooner.
April 18th, 1997
Graduate Student Symposium, jointly with the Southern Wisconsin Local
Section
For inquiries, contact Prof. Peter Hesketh peter@uicbert.eecs.uic.edu
May 12th, 1997
National Speaker
Murray Bullis, "Semiconductor Equipment and Materials International:
300 mm Silicon for ULSI Circuits"
Abstract: The transition from 200 mm to 300 mm silicon wafers is expected to be extremely costly, but inevitable. Costs will be minimized if wafers, equipment interfaces, etc., are standardized worldwide. Technologists in the US, Europe, Japan, and the Pacific Rim have been developing specifications for 300 mm wafers for over a year. The larger wafers will differ in several significant ways. We will review the dimensional and crystallographic attributes of 300 mm wafers compared to smaller ones. We will consider physical properties appropriate to 0.25 and 0.18 micrometer design rules, based on the National Technology Roadmap for Semiconductors. Finally, we will consider briefly the state of metrology needed to support these requirements.
W. Murray Bullis joined Semiconductor Equipment and Materials International as Director of Standards in January 1996. He had previously been with Siltec Silicon, the Fairchild Research Center, the National Bureau of Standards, Texas Instruments, Farnsworth Electronics, Los Alamos National Laboratory, and Lincoln Laboratory. He earned his Ph.D. at MIT in 1956 and his A.B. at Miami University (Ohio) in 1951. He has published over 50 papers and five book chapters in silicon technology.
Place: Engineering Research Facility, University of Illinois at Chicago, 842 West Taylor St., Room 1043. This is at the corner of Taylor and Halstead; the entrance is on Taylor St. Adequate parking is available at the parking structure immediately east across Halstead.
The meeting had 12 attendees for the social, dinner and the talk. During the social a lively discussion ensued with our guest regarding various issues concerning the state of the Society. Prior to the technical talk we have received a thorough report about the health of the Society. We are duly noting the need of timely filing of financial statements, due in early January. It was also pointed out that the Society is able to take care of the section funds, as opposed to keeping them in a local bank. The advantage would be earning interest and saving on the bank maintenance fee; the downside might be inability to write checks. The issue should be further duscussed during the planning meeting, which will be held in July.
List of Past Meetings
September 7th, 1995
"Results of a hydrocarbon chemical sensor"
Dr. James Vetrone, Materials Science Division, Argonne National Laboratory
Technical Chairman: Peter Hesketh
October 10th, 1995
Chicago Local Section Reception at the Sheraton Hotel during the National
ECS Meeting 8-13th Oct.
Location: 8-10pm Chicago Ballroom 9. Sheraton Hotel
Chairman: Yong Zhen
November 16th, 1995
"Quantum
and Dielectric Confinement Effects in Porous Silicon"
Dr. Davorin Babic, EECS Dept., University of Illinois at Chicago
Location: University of Illinois at Chicago
6:30 PM - Laboratory tour and social
7:00 PM - Dinner ($20, $8 for students, postdoctorals and unemployed members)
8:00 PM - Talk
Chairman: Peter Hesketh
February
"Rechargeable Zn/Mn Oxide Batteries"
Dr. Lijun Bai, Motorola Energy Systems, Motorola Inc.
Technical Chairman: Yong Zhen
March 14th, 1996
Symposium on
the Electrochemistry of Surfaces and Interfaces
Technical Chairmen: Peter Hesketh, Zoltan Nagy, and Gerry Zajac
Location: Argonne National Laboratory
Six invited speakers: Andrzej Wieckowski, Richard Van Duyne, Hoydoo You,
Brian Niece, Robert M. Corn, and Michael Bedzyk presented papers on techniques
for the study of electrochemical interfaces by X-ray, surface-enhanced
spectroscopy, surface diffraction, scanning probe, and second harmonic
generation. A tour of the Advanced Photon Source 7GeV Synchrotron accelerator
ring was given. There were 71 people in attendance at the Symposium, of
which 42 were students. A poster session with cocktail hour and dinner
followed the invited talks. Twelve posters were presented on various aspects
of electrochemical science. This meeting format was very successful and
enjoyable for all those who attended and the local section is planning
to hold annual topical symposia.
April 11th, 1996
National Speaker - Barry Miller
"New Electrochemistry for Carbon-Diamond and Fullerenes"
The electrochemistry of fullerenes on graphite electrodes are particularly
rich, showing an optical sensitivity and multiple levels of reduction at
cathodic bias. He described the unique properties of thin p-type diamond
films deposited on silicon wafers. These electrodes are very stable over
a wide range of potential, even at high anodic bias. The high over potentials
are thought to be due to the limited number of available states in the
diamond and a collection of localized acceptor surface states. Professor
Miller also presented an overview of the healthy status of the Society.
August 8th, 1996
"New
Materials and Transducers for Chemical Sensors" by Wolfgang Göpel,
University of Tubingen, Germany
Dr. Göpel will survey "top-down" (microstructure) and "bottom-up"
(chemical synthesis) approaches to designing chemical and biochemical sensors.
Emphasis is on new materials and transducers for molecular recognition
with current and future devices. "Lock- and-key" structures convert
chemical information into electrical signals. This requires control of
atomic structures of chemically sensitive materials under equilibrium or
kinetic control. Recognition and transduction mechanisms are deduced from
microscopic, spectroscopic, and sensor-response studies on prototype devices.
Selected examples illustrate this approach for different materials, including
electron conductors, mixed conductors, molecular cages, polymers, and biomolecular
functional units. He will also discuss the ultimate limits of miniaturization
of sensors, and the development of "electronic noses" for chemical
sensing.
Prepared by Petr Vanýsek
Last updated: 13 May 1997
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